报告题目:Non-Adiabatic Molecular Dynamics Investigations on the Ultrafast Charge Dynamics at Interfaces
报告人:赵瑾教授 中国科学技术大学物理系
时间: 6月21号(周三)上午10:30am
地点: 田家炳楼南203室
邀请人: 王金兰
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报告内容简介:
The ultrafast dynamics of photo-excited charge carriers plays an important in optoelectronics and solar energy conversion. Using nonadiabatic molecular dynamics simulation, we study the ultrafast charge dynamics at CH3OH/TiO2 and MoS2/WS2 interfaces. For CH3OH, we study the forward and backward hole transfer between TiO2 and CH3OH as well as the whole hole relaxation process to valance band maximum (VBM). First, we found that the hole trapping ability of CH3OH depends on the adsorption structure strongly. Second, we found the time scales of forward hole transfer process from TiO2 to CH3O (hole trapping process) and hole relaxation to VBM strongly depend on the temperature. The hole relaxation process to VBM is also slow down significantly. This can be interpreted by the reduction of the non-adiabatic coupling and the phonon occupation. For MoS2/WS2, we show that instead of direct tunneling, the ultrafast interlayer hole transfer is strongly promoted by an adiabatic mechanism through phonon excitation. At room temperature the interlayer charge transfer in MoS2/WS2 is ultrafast with a timescale of 20 fs which is in good agreement with the experiment. This ultrafast hole transfer process can be suppressed by decreasing the temperature to 100K. The atomic level picture of phonon-assisted ultrafast mechanism revealed in our study is valuable both for the fundamental understanding of ultrafast charge carrier dynamics as well as for the design of novel quasi-2D devices.
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