报告题目:Interface Engineering for 2D Phosphorene Based Optoelectronic Devices
报告人:Wei Chen National University of Singapore
时间: 4月12号(周三)下午3:00pm
地点: 田家炳楼南203室
邀请人: 王金兰
欢迎各位老师、同学参加!
Biography
报告内容简介:
Black phosphorus (BP), as a fast-emerging two-dimensional (2D) material, stands out from other members in 2D family such as graphene and transition metal dichalcogenides (TMDs), and attracts substantial research interests attributed to its remarkably unique fundamental properties and versatile device applications. In this talk, I will summarize and discuss our recent work for interface engineered 2D materials phosphorene based field-effect-transistors (FETs) and photo-transistors, through the combination of in-situ FET device evaluation and photoelectron spectroscopy investigation. We will particularly emphasize on the electron and hole doping effect on the transport properties and optoelectronic response of phosphorene devices.
References
(1) “Surface Transfer Doping Induced Effective Modulation on Ambipolar Characteristics of Few-layer Black Phosphorus” Xiang D, Han C, Wu J, Zhong S, Liu YY, Lin JD, Zhang XA, Hu WP, Özyilmaz B, Castro Neto AH, Wee ATS, Chen Wei*, Nature Communication 6, 6485 (2015)
(2) “Epitaxial Growth of Single Layer Blue Phosphorene: A New Phase of Two-Dimensional Phosphorus" JL, Zhao ST, Han C, Wang ZZ, Zhong S, Sun S, Guo R, Zhou X, Gu CD, Yuan KD, Li ZY*, Chen Wei*, Nano Letter 16, 4903-4908 (2016)