学术报告：Understanding Complex Oxide Interfaces with Atomic Precision

报告人：张坚地 教授（美国路易斯安娜州立大学，物理与天文系）

时间:  2017年1月6号（周五）上午10:00

地点:  田家炳楼南203室

邀请人： 董帅

欢迎各位老师、同学参加!

报告人简介：

路易斯安那州立大学教授，美国物理学会会士(APS Fellow)。

分别在南京理工大学，中国科学院，美国雪城大学获学士、硕士、博士学位。

曾在内布拉斯加大学、田纳西大学、橡树岭国家实验室、佛罗里达国际大学从事科研工作和任教。

曾获NSF Career Award。发表论文100余篇，包括Science, Phys. Rev. Lett., Adv. Mater. PNAS等。

Abstract:

A defining characteristic of complex transition-metal oxides (TMOs) is that they contain incomplete d sub-shells thus having a multiple of possible ground states. This triggers their vast variety of physical properties, emerging from a complicated competition between multiple energy scales and the close coupling with lattice and spin degrees of freedom. On one hand, both chemical and physical complexity presents a formidable challenge in condensed matter physics and materials science in general. On the other hand, the complexity is directly responsible for their tunability, offering a fabulous playground for making artificial structures of these materials with new quantum physics of matter.It has become increasingly clear that surfaces, interfaces, thin films and heterostructures of TMOs display a rich diversity of fascinating properties that are related, but not identical to, the bulk phenomena, while the origin is still fiercely contested. In this talk, I will introduce our ability in growing high quality thin films with atomically sharp interfaces, as well as powerful tools to characterize their properties down to atomic resolution. I will use several examples to illustrate that, such combination of growth and characterization techniques not only allow us to discover the unknown origin of conventional interface, but widely expand the opportunities to explore unconventional interfaces and search for novel quantum functionalities.